Initial stages of growth of the GaN(11\=22) layer on a nano-structured Si(113) substrate

Scanning electron microscopy was used to study of the initial stages formation a semipolar GaN(1122) layer during Metalorganic Chemical Vapor Deposition on Si(113) substrates, surface which U-shaped grooves with element sizes <100 nm (NP-Si(113)) were formed. It found that NP-Si(113) substrates buffer AlN stimulate islands faceted by planes m-GaN, c-GaN. is shown there predominant growth m-GaN facet in comparison c-GaN.The experimental results correspond Gibbs--Curie--Wolff selection principle, but taking into account elastic stresses c-GaN plane. Keywords: gallium nitride, nano-structured substrate, silicon.